PECVD

Description

Our plasma-enhanced chemical vapor deposition (PECVD) system from AGS utilizes plasma decomposition of silane (SiH4) in in presence of an oxygen or nitrogen source to deposit SiO2 and Si3N4 dielectric thin films.  The capacitive coupled plasma reduces the required temperature for deposition to a minimum of ~150degC.

Capabilities

• Dielectric deposition at low temperature
• Minimum temperature of ~150C.
• Maximum substrate size 200mm