PEALD

Description

Our plasma-enhanced atomic layer deposition (PEALD) system from Arradiance utilizes high-speed pulse valves to sequentially deliver reactants that combine to deposit thin films on the surface of a sample at temperatures up to 300C.  Eight precursor positions (4 metalorganic + 4 oxidizer) and three plasma gases (N2, O2, H2) enable a wide range of films and process optimization.

Capabilities

• Enables users to deposit conformal and precise thickness thin films onto all functionalized surfaces of the substrate.
• Superlattice films from multiple precursors (e.g. Al doped ZnO).