Oxford ICP/RIE

Description

Our Oxford ICP-RIE Plaslab 180 utilizes a 3kW RF power supply to generate a remote plasma of Cl2, BCl3, H2, Ar, NF3, O2, SF6, and/or C4F8 gas species that can be further accelerated (300W table bias) toward a substrate resulting in a combination of physical and chemical dry etching for material removal.  The turbomolecular pumped system achieves a base pressure < 1E-7 Torr and is equipped with chuck temperature control from -110 to 350 degrees C.

Capabilities

• Max substrate 200mm (etch area is 100mm defined by quartz clamp)
• Physical etch assist via Ar
• Chemical etch via F or Cl species
• Modification of etching environment toward reducing (H2) or oxidizing (O2)
• Cryo-cooled stage for deep RIE etching (e.g. Bosch)