IV-VI Compound Semiconductor

Description

Used for the growth of Pb and Sn-based device structures for infrared imaging and thermoelectric applications. Similar to II-VI based infrared focal plane arrays, IV-VI compound semiconductors may be the viable route to high-performance yet defect tolerant infrared imaging systems that enable “night vision” for security and military applications while opening vistas for medical or chemical sensing applications. In addition, these materials are useful for creating advanced structures for thermoelectric energy harvesting of waste heat, particularly when combined with new approaches relying on on nanostructuring.  Current sources include PbTe, SnTe, Te, BiTe, and TlTe effusion cells.  This chamber shares a Hydrogen surface cleaning chamber.