High-k Dielectric

Description

Used for the development of gate dielectrics on compound semiconductors in the quest for a III-V MOSFET device. A suitable oxide is needed as a gate dielectric on compound semiconductors as the silicon industry searches to replace the CMOS channel with high-mobility III-V semiconductors. Examples of oxides include Ga2O3, GdGaO3, LaAlO3, GdScO3, LaLuO3 deposition using a combination of high-temperature effusion sources and electron-beam deposition. RHEED is used for determining the crystal structure of the semiconductor surfaces and for growth monitoring.  This chamber has GaO, InO, Ga, Gd, Si, and O2plasma sources.