Epitaxy Research Shared Space

Mission and Objectives

The Epitaxy Research Service Center (ERSC) is located in the Roy F. Mitte (RFM) building and contains a unique set of equipment all designed to grow crystalline thin films in a process called heteroepitaxy. The two main types of systems utilized to grow these thin films are a high-vacuum Molecular Beam Epitaxy (MBE) multi-chamber cluster and a high-temperature Metalorganic Chemical Vapor Deposition (MOCVD) reactor. These systems are typically segregated by material family to prevent cross-contamination and allow our researchers to experiment with a large portion of the periodic table in search of new functional semiconductor and oxide materials.

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  • Antimonide Chamber

    Dedicated to growth of compound semiconductors for high-speed
    electronics and optoelectronic device applications. Sources include
    Be, In, As, GaTe, Ga, Si, Sb, Al effusion cells. 

  • Arsenide Chamber

    Dedicated to growth of compound semiconductors for high-speed
    electronics and optoelectronic device applications. Sources include
    Al, Ga, GaP, Be, As, Si, In in effusion cells. 

  • Contactless Mobility

    The LEI 1600 Mobility Measurement System has the capability of measuring various semiconductor transport properties, which include mobility, sheet charge density and sheet resistance via a non-contact measurement method.

  • Crystalline Oxides

    Growth of crystalline multifunctional oxides on oxide and semiconductor
    substrates as well as Si and Si/Ge heterostructures. Current sources include Mn, Fe, La, Ba, Si, Sr, Bi, Ti, and O2plasma.

  • High-k Dielectric

    Used for the development of gate dielectrics on compound semiconductors
    in the quest for a III-V MOSFET device. This chamber has GaO, InO, Ga, Gd, Si, and O2plasma sources.

  • In-Situ X-Ray Photoelectron Spectroscopy (XPS)

    X-ray Photoelectron Spectroscopy (XPS) is primarily used to probe the bond configurations of atoms in the top 2-5nm of a thin film specimen.  Soft X-ray radiation (from Al and/or Mg sources, need both to distinguish XPS from Auger) is directed at the sample to induce emission of inner shell electrons.  Measuring the characteristic kinetic energy of the emitted electrons is used to determine their binding energy and therefore what atom they came from as well as the local bonding scheme.

  • IV-VI Compound Semiconductor

    Used for the growth of Pb and Sn-based device structures for
    infrared imaging and thermoelectric applications. Current sources include PbTe, SnTe, Te, BiTe, and TlTe effusion cells.  This chamber shares a Hydrogen surface cleaning chamber.

  • Telluride Chamber

    Used for the growth of Te-based device structures for infrared
    imaging applications. Current sources include CdAs, Te, Mg, Sb, CdTe, Cd, Zn, and Se effusion cells.  This chamber shares a Hydrogen surface cleaning chamber.

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