Arsenide Chamber
Description
Dedicated to the growth of compound semiconductors for high-speed electronics and optoelectronic device applications. Sources include Al, Ga, GaP, Be, As, Si, In in effusion cells. RHEED is used for growth rate and composition determination and for monitoring the crystal structure during deposition. Examples of device structures include PHEMT, LEDs, lasers, optical modulators, and high-efficiency multijunction photovoltaic solar cells.
Location: RFM 1236
Manager: Dr. Casey Smith, casey.smith@txstate.edu, 512-213-7909