ezHEMS

Measurements of the Hall Effect and magneto-resistance can be helpful in characterizing a variety of materials including semiconductors, multi-layer devices, conducting organic and inorganic materials with low resistance. The NanoMagnetics Instruments’ Hall Effect Measurement System (ezHEMS) combines a LabVIEW® based control system with integrated hardware to characterize current verses voltage (I-V) and resistance as a function of temperature (R-T). Temperature capabilities range from 80K to 800K and a 4, 6 or 8 probe contacts can be enabled without new sample connections or hardware configuration. The fully integrated data collection of the ezHEMS reduces time spent making measurements and allows for real-time feedback.
Capabilities
• Temperature range of 80K up to 800K (+/-5% tolerance)
• Measures 4-probe VDP or 6 & 8-contact Hall bar samples
• Capable of performing I-V measurement, R-T measurement
• Fixed field strengths of 6000-10000G
• Calculates resistivity, Hall coefficient, and carrier concentration, type and mobility
• Sample materials can be GaAs, InP, InAs, Si, Ge, SiGe, HgCdTe, GaN, SiC, AlN, metal oxides, organic conductors, etc
Location: RFM 2226
Manager: Dr. Casey Smith, casey.smith@txstate.edu
Model: ezHEMS500