ERSC Mission and Objectives
The Epitaxy Research Service Center (ERSC) is located in the Roy F. Mitte (RFM) building and contains a unique set of equipment all designed to grow crystalline thin films in a process called heteroepitaxy. The two main types of systems utilized to grow these thin films are a high vacuum Molecular Beam Epitaxy (MBE) multi-chamber cluster and a high temperature Metalorganic Chemical Vapor Deposition (MOCVD) reactor. These systems are typically segregated by material family to prevent cross contamination and allow our researchers to experiment with a large portion of the periodic table in search of new functional semiconductor and oxide materials.
Please follow this hyperlink view the current MBE Cluster configuration